How HD-KFM and ResiScope™ reveal moiré superlattices, layer-dependent work function,
and conductivity in graphene, hBN, and MoS₂ — at the nanoscale resolution these
materials demand.
The electronic properties of graphene, hBN, and MoS₂ are exquisitely sensitive to layer
count — a single additional atomic layer can shift the work function by tens of millivolts,
switch a semiconductor to a semimetal, or introduce moiré-driven quantum phenomena that
exist at no other length scale.
Conventional optical and transport measurements provide spatially averaged information.
They cannot identify where charge accumulates, how domains interact, or what happens at a
twisted bilayer interface. Kelvin Force Microscopy (KFM) and conductive AFM provide
the missing spatial dimension — mapping potential and conductivity distributions
with sub-10 nm resolution across the exact grain and domain structures responsible for
device-level behavior.
Folded or twisted hBN layers form moiré superlattices — periodic interference patterns
arising from rotational misalignment between atomic planes. These superlattices create
long-range modulations in local electronic structure and are central to engineered quantum
materials. HD-KFM maps the charge and potential modulations of moiré domains with the
resolution needed to characterize them.
The Nano-Observer AFM with HD-KFM provides multi-scale characterization of folded hBN
across three complementary length scales, revealing the complete hierarchy of structural
and electronic organization in a single session:
Scale
What is mapped
Key information
5 µm scan
Large-scale domain structure
Overall sample architecture, folded region geometry, domain size distribution
2 µm scan
Mid-range domain boundary mapping
Boundary sharpness, transition widths, lateral potential gradients between domains
Figure 1. Multi-scale HD-KFM surface potential maps of folded hBN.
At 1 µm resolution, triangular moiré domains of approximately 100 nm are clearly
resolved through periodic surface potential modulation — invisible to topography alone.
Nano-Observer AFM.
Why single-pass HD-KFM is essential for moiré characterization: Moiré
patterns in hBN produce surface potential modulations on the 10–100 mV scale across domains
of ~100 nm. Conventional dual-pass KPFM degrades lateral resolution through tip-sample
distance drift between passes. HD-KFM’s single-pass harmonic detection eliminates this
artifact, preserving the spatial resolution and potential contrast necessary to resolve
individual moiré unit cells.
Application 2 · HD-KFM
Graphene: Layer-by-Layer Work Function Mapping
Graphene’s electronic properties depend critically on layer count. Monolayer graphene is a
zero-gap semimetal with linear Dirac dispersion; bilayer graphene has a parabolic band
structure and a tunable bandgap; trilayer and thicker films shift toward graphite-like
behavior. Identifying these regions spatially is a fundamental requirement for 2D materials
research and device fabrication.
Each additional graphene layer produces a measurable, systematic shift in local surface
potential, creating distinct color contrast in the KFM map that enables unambiguous layer
assignment — simultaneously with topography acquisition.
HD-KFM
Figure 2. Correlated topography and HD-KFM surface potential map of multi-layer graphene.
Layer regions 1ML through 4ML are unambiguously distinguished by work function contrast,
with sharp, well-defined interfaces visible in both channels. Nano-Observer AFM.
Monolayer Identification
Lowest work function region with maximum substrate influence. Distinct potential contrast vs. the SiO₂ substrate enables unambiguous 1ML assignment.
Bilayer & Trilayer Contrast
Intermediate work function shifts with progressively reduced substrate screening. Bernal vs. twisted stacking distinguishable in the 3ML region.
Interface Sharpness
Sharp, well-defined boundaries between layer count regions — directly revealing flake geometry and edge structure at sub-10 nm resolution.
Substrate Effects
hBN substrates reduce charge inhomogeneity in graphene layers. Molecular intercalation (water, oxygen) modifies work functions and is detectable by HD-KFM.
Application 3 · HD-KFM + ResiScope™
MoS₂: Combined Work Function and Resistance Mapping
Molybdenum disulfide (MoS₂) is a transition metal dichalcogenide (TMD) with a dramatic
layer-dependent electronic transition: bulk MoS₂ is an indirect bandgap semiconductor
(1.2 eV), while monolayer MoS₂ becomes a direct bandgap semiconductor (1.8 eV) with strong
photoluminescence. This transition is accompanied by measurable changes in both surface
potential and electrical conductivity.
The combination of HD-KFM and ResiScope™ is uniquely powerful for TMD characterization
because the two measurements are complementary and non-redundant. Work
function (HD-KFM) reflects changes in electrostatic potential and band alignment; resistance
(ResiScope™) reflects carrier density and mobility. Together, they provide a complete
picture of how the semiconductor-to-semimetal transition in MoS₂ evolves at the
single-layer level.
HD-KFM + ResiScope™
Figure 3. Correlated topography, HD-KFM surface potential, and ResiScope™ resistance maps of few-layer MoS₂,
with accompanying quantitative line profiles. The resistance map reveals exponential
conductivity changes across layer boundaries — data inaccessible to either technique alone.
Nano-Observer AFM.
HD-KFM — Work Function
Maps work function shifts with nanometer-scale resolution
Reveals charge distribution across different layer counts
Shows systematic surface potential changes with layer thickness
Detects interlayer charge transfer at domain boundaries
ResiScope™ — Resistance
Maps resistance across 10² to 10¹² Ω in a single scan
Distinguishes conductive and insulating regions clearly
Quantifies exponential conductivity change with layer count
No manual gain adjustment — full range captured automatically
ResiScope™ dynamic range advantage for MoS₂: MoS₂ samples routinely
present resistance variations spanning many orders of magnitude within a single scan area —
from highly conductive few-layer regions (10²–10⁴ Ω) to near-insulating monolayer domains
on resistive substrates (10⁹–10¹² Ω). ResiScope™’s 10-decade dynamic range captures this
full span in a single pass without gain switching, delivering quantitative resistance maps
that conventional C-AFM amplifiers cannot obtain.
Technique
HD-KFM: Harmonic Detection Kelvin Force Microscopy
HD-KFM (Harmonic Detection Kelvin Force Microscopy) is CSInstruments’ proprietary
single-pass KFM implementation. Unlike conventional dual-pass (lift mode) KPFM, HD-KFM
measures topography and surface potential simultaneously in a single scan — eliminating
tip-sample distance drift artifacts that degrade resolution in two-pass measurements.
By leveraging the cantilever’s second eigenmode through harmonic detection, HD-KFM operates
at high frequency (~350–400 kHz), enabling not only high-resolution surface potential
mapping but also sensitivity to sub-surface features and buried interfaces invisible to
conventional KFM techniques.
Single Pass — No Lift Artifacts
Topography and surface potential acquired simultaneously. No tip-sample distance drift between passes — sharper boundaries, more accurate potential values.
Second Eigenmode Detection
High-frequency (~350–400 kHz) harmonic operation delivers 20–30× more detection cycles per pixel than conventional side-band KFM, significantly improving signal-to-noise ratio.
Electric Field Cancelling (EFC)
EFC enables pure MFM measurements by eliminating unwanted electrostatic contributions — essential for samples with both magnetic and electrical properties.
One-Click Setup
Built-in auto-tune algorithm optimizes all settings automatically. No multi-step manual adjustment required — reproducible results across operators and sessions.
Characterize Your 2D Materials with HD-KFM
Contact our application specialists to discuss your graphene, hBN, or TMD
characterization requirements — or request application data for your specific material system.
Figure 4. HD-KFM image (10 µm) of three linear electrodes on a silicon surface, biased at 1 V. The surface potential is homogeneous on the electrodes (dark blue), and the lateral diffusion of the potential around the electrodes (cyan) is resolved. Nano-Observer AFM.
Before interpreting potential contrast on an unknown film, KPFM can be checked on a structure whose potential is set externally. With the electrodes biased, the HD-KFM map shows the applied potential as a uniform level on each electrode and how it spreads into the surrounding surface. The same HD-KFM image is shown on the HD-KFM™ III page with other reference samples.
Summary
Conclusion
HD-KFM™ records topography and surface potential in the same single pass, which resolves about 100 nm triangular moiré domains in folded hBN, distinguishes graphene from one to four layers by work-function contrast and, combined with ResiScope™, maps layer-dependent work function and resistance on few-layer MoS₂. Because the channels are acquired on the same area, layer number, potential and conductivity can be compared directly on one Nano-Observer AFM.
Published work
Research published with CSInstruments AFMs
Peer-reviewed studies on 2D materials and graphene-based nanostructures in which CSInstruments AFMs were used. More on the publications page.
Kelvin Force Microscopy (KFM) is the primary AFM technique for characterizing the electronic properties of 2D materials such as graphene, hBN, and MoS₂. It directly maps surface potential and work function at nanometer resolution, revealing layer-dependent electronic structure, moiré superlattice charge modulation, and interfacial charge transfer effects that are invisible to topography imaging alone. In single-pass HD-KFM mode, the technique achieves sub-10 nm spatial resolution with minimal electrostatic tip-sample perturbation, making it ideal for ultrathin van der Waals heterostructures.
How does AFM reveal moiré patterns in hBN?
Moiré patterns in folded or twisted hBN arise from periodic lattice interference between misaligned layers, creating superlattice modulations on the 10–100 nm scale. HD-KFM surface potential mapping on the Nano-Observer AFM resolves these features at multiple scales: large-scale domain structure (5 µm scale) showing overall architecture, mid-range mapping (2 µm scale) of domain boundaries and transitions, and high-resolution moiré pattern visualization with ~100 nm triangular domains at 1 µm scale. The surface potential contrast in HD-KFM directly reflects local variations in interlayer coupling and charge redistribution across the moiré unit cell.
Can AFM distinguish graphene monolayer from bilayer and trilayer?
Yes. HD-KFM on the Nano-Observer AFM distinguishes monolayer (1ML), bilayer (2ML), trilayer (3ML), and four-layer (4ML) graphene regions through work function contrast in the surface potential map. Each additional graphene layer produces a measurable, systematic shift in local surface potential, creating distinct, reproducible color contrast in the KFM image. The technique simultaneously maps sharp, well-defined interfaces between regions with different layer counts and correlates electronic structure directly with topographic layer thickness measurements.
How is MoS₂ characterized by AFM?
MoS₂ characterization on the Nano-Observer AFM combines HD-KFM and ResiScope™ for comprehensive layer-dependent analysis. HD-KFM maps work function shifts with nanometer-scale resolution, reveals charge distribution across different layer counts, and shows systematic changes in surface potential with layer thickness. ResiScope™ maps resistance across an exceptional 10-decade dynamic range (10² to 10¹² Ω), clearly distinguishing conductive and insulating regions and quantifying how conductivity changes exponentially with the number of MoS₂ layers.
What is HD-KFM and how does it differ from standard KPFM?
HD-KFM (Harmonic Detection Kelvin Force Microscopy) is CSInstruments' proprietary single-pass KFM implementation. Unlike conventional dual-pass (lift mode) KPFM, HD-KFM measures topography and surface potential simultaneously in a single scan, eliminating tip-sample distance drift artifacts. The harmonic detection approach leverages the cantilever's second eigenmode at high frequency (~350–400 kHz), achieving sub-10 nm lateral resolution.
What AFM is best for graphene and 2D materials research?
The Nano-Observer AFM with HD-KFM module is optimized for 2D materials characterization. Its single-pass KFM implementation provides the spatial resolution necessary to map moiré superlattices, layer boundaries, and interlayer charge transfer in van der Waals heterostructures. The optional ResiScope™ module extends characterization to resistance mapping across 10 decades (10² to 10¹² Ω), enabling correlated work function and conductivity measurements on the same sample area.
Are moiré patterns visible in AFM topography?
Not on the folded hBN of this note: the surface is atomically flat, and the triangular moiré domains of about 100 nm appear only in the HD-KFM surface-potential channel.
What scan size is needed to resolve moiré domains in hBN?
In this note the multi-scale series goes from 5 µm to 2 µm to 1 µm; the moiré domains of about 100 nm are clearly resolved at the 1 µm scan size.
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