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Conductive Atomic Force Microscopy (C-AFM)
Nanoscale Electrical Properties
Conductive Atomic Force Microscopy (C-AFM) is an AFM technique that allows for simultaneous measurement of sample topography and electrical properties at the nanoscale. This powerful mode is crucial for characterizing a wide range of materials, from semiconductors to biological samples, offering unprecedented insights into local conductivity variations.
SRAM Image with C-AFM 50x50 micron scan size
Key Features
C-AFM mode offers:
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Wide Current Range: Measure currents from pA to µA
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High Spatial Resolution: Achieve lateral resolution down to a few nanometers
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Simultaneous Topography: Correlate electrical properties with surface features
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Spectroscopy Capabilities: Perform local I-V curve measurements
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Integration with Other Modes: Combine C-AFM with mechanical or thermal property mapping
ITO, 3µm scan Current signal C-AFM
Oxide film grown on stainless steel Scan Size:1x1 micron
Doping test sample used by semiconductor industry to improve doping concentration process.
Sample: Polymer Battery Scan size: 80 microns
Semiconductors/microelectronics Scan size: 50x50 microns
Perovskite Solar cell (2µm scan)
Benefits of Conductive AFM
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Superior Sensitivity: The C-AFM offers unparalleled current detection capabilities.
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User-Friendly Interface: Intuitive software makes C-AFM accessible to both experts and beginners.
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Versatility: Easily combine C-AFM with other AFM modes for comprehensive sample characterization.
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Expert Support: Our team of specialists provides ongoing support and training.
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Cutting-Edge Research: Stay at the forefront of nanoscale electrical characterization with our continuously updated technology.
Check the
ResiScope III page for advanced characterization
Battery analysis with advanced CSInstruments techniques