Application fields

HD-KFM III
The Most Advanced Single-Pass KFM Mode

HD-KFM III™ represents the cutting edge of Kelvin Probe Force Microscopy (KFM) technology. This advanced module for the Nano-Observer II AFM offers unparalleled sensitivity and resolution in single-pass mode, revolutionizing surface potential measurements at the nanoscale.

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Key Features

Single-pass operation in HD-KFM III represents a significant advancement over traditional Kelvin Probe Force Microscopy techniques:

Elimination of Lift Scans:

Traditional KFM requires two passes: one for topography and another lifted pass for potential measurement.
HD-KFM III combines both measurements in a single pass, saving time and reducing potential errors.

Proximity to Surface:

The tip operates at a typical minimum distance of 0.1-0.5 nm from the sample surface.
This close proximity allows for much stronger interaction with the sample's electrostatic field.
Compared to standard KFM (10-100 nm lift height), HD-KFM III probes an electrostatic field 100-10,000 times stronger.

Enhanced Resolution and Sensitivity:

Closer proximity leads to significant improvements in lateral resolution.
Sensitivity is greatly enhanced, allowing for detection of subtle variations in surface potential.
Enables clear differentiation between features like single and multiple layers of 2D materials.

Topography Frequency:

The first flexural mode of the cantilever is excited mechanically.
This frequency is used to measure and control the sample topography.
Allows for precise tracking of surface features without interference

Surface Potential Frequency:

The second flexural mode of the cantilever is excited electrically.
This separate frequency is dedicated to measuring surface potential.
Enables simultaneous, independent measurement of topography and surface

Signal Amplification:

The use of the second eigenmode for electrical excitation inherently amplifies the signal.
This amplification occurs even with very small applied AC voltages.
Results in improved signal-to-noise ratio and higher sensitivity to small potential differences.

Enhanced Signal Amplification:

The VAC bias is fine-tuned to the second eigenmode of the cantilever.
This tuning amplifies the signal by the Q factor of the second mode.
The Q factor amplification can be significant, often 100 times or more, greatly enhancing sensitivity.

Improved Stability:

The second eigenmode has a stiffer effective spring constant compared to the fundamental mode.
This increased stiffness provides more stable oscillation during surface scanning.
Stability translates to more reliable and consistent measurements, especially on challenging samples.

Automated Frequency Optimization:

The Vac bias is fine-tuned to the Second eigenmode automatically by the software without user intervention.
Patented algorithm selects the best frequency position around the resonance peak.
Achieves better resolution and sensitivity through optimized frequency selection.

dC/dZ Measurements: dC/dZ measures the change in capacitance with respect to the tip-sample distance, providing information about local dielectric properties.

Benefits: Enables mapping of dielectric constants and investigation of thin film properties at the nanoscale.

Topography: Metallic structure embedded on epoxy

dC/dZ: Metallic structure embedded on epoxy

Lift Mode:

An optional mode where the tip is lifted to a specific height above the surface after recording topography, then used for potential measurement. Benefits: Useful for samples with large height variations or when separating long-range electrostatic forces from short-range forces is necessary.

These advanced features expand the capabilities of HD-KFM III, making it a versatile tool for a wide range of nanoscale electrical characterization needs.

EFC (Electrical Field Compensation for MFM):

EFC nullifies the electrostatic interaction between the tip and sample during Magnetic Force Microscopy measurements.

Benefits: Allows for pure magnetic measurements without electrostatic interference, crucial for accurate characterization of magnetic nanostructures.

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