Application fields

HD-KFM III
The Most Advanced Single-Pass KFM Mode

HD-KFM III™ represents the cutting edge of Kelvin Probe Force Microscopy (KFM) technology. This advanced module for the Nano-Observer II AFM offers unparalleled sensitivity and resolution in single-pass mode, revolutionizing surface potential measurements at the nanoscale.

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Key Features

Bimodal Dual Frequency Excitation

Topography Frequency:

The first flexural mode of the cantilever is excited mechanically.
This frequency is used to measure and control the sample topography.
Allows for precise tracking of surface features without interference

Surface Potential Frequency:

The second flexural mode of the cantilever is excited electrically.
This separate frequency is dedicated to measuring surface potential.
Enables simultaneous, independent measurement of topography and surface

Signal Amplification:

The use of the second eigenmode for electrical excitation inherently amplifies the signal.
This amplification occurs even with very small applied AC voltages.
Results in improved signal-to-noise ratio and higher sensitivity to small potential differences.

Enhanced Signal Amplification:

The VAC bias is fine-tuned to the second eigenmode of the cantilever.
This tuning amplifies the signal by the Q factor of the second mode.
The Q factor amplification can be significant, often 100 times or more, greatly enhancing sensitivity.

Improved Stability:

The second eigenmode has a stiffer effective spring constant compared to the fundamental mode.
This increased stiffness provides more stable oscillation during surface scanning.
Stability translates to more reliable and consistent measurements, especially on challenging samples.

Automated Frequency Optimization:

The Vac bias is fine-tuned to the Second eigenmode automatically by the software without user intervention.
Patented algorithm selects the best frequency position around the resonance peak.
Achieves better resolution and sensitivity through optimized frequency selection.

Single-Pass Operation

Single-pass operation in HD-KFM III represents a significant advancement over traditional Kelvin Probe Force Microscopy techniques:

Elimination of Lift Scans:

Traditional KFM requires two passes: one for topography and another lifted pass for potential measurement.
HD-KFM III combines both measurements in a single pass, saving time and reducing potential errors.

Proximity to Surface:

The tip operates at a typical minimum distance of 0.1-0.5 nm from the sample surface.
This close proximity allows for much stronger interaction with the sample's electrostatic field.
Compared to standard KFM (10-100 nm lift height), HD-KFM III probes an electrostatic field 100-10,000 times stronger.

Enhanced Resolution and Sensitivity:

Closer proximity leads to significant improvements in lateral resolution.
Sensitivity is greatly enhanced, allowing for detection of subtle variations in surface potential.
Enables clear differentiation between features like single and multiple layers of 2D materials.

HD-KFM III:
High Definition - Kelvin Probe Force Microscopy

HD-KFM III is an advanced Kelvin Probe Force Microscopy solution that builds upon previous generations with several key improvements. Here are its notable features and capabilities:

Enhanced Measurement Accuracy: The system offers improved accuracy and significantly reduced background noise compared to previous versions, enabling more precise surface potential measurements at the nanoscale.
Simultaneous Multi-Parameter Imaging: One of the most impressive capabilities is the ability to perform simultaneous MFM (Magnetic Force Microscopy) and HD-KFM measurements, allowing researchers to correlate magnetic and electrical properties in a single scan.
Advanced Dielectric Capabilities: The system includes dC/dZ functionality, making it particularly valuable for dielectric measurements and characterization of insulating materials.
Electrical Field Compensation: Features an MFM with EFC (Electrical Field Compensation) option, which helps eliminate electrical interference during magnetic measurements.

Versatile Applications: The system excels in various applications, including:
- Analysis of composite materials and alloys
- Detailed surface potential mapping
- Combined magnetic and electrical characterization
- High-resolution topographical imaging alongside electrical measurements

This technology represents a significant advancement in surface characterization capabilities, particularly valuable for research in materials science, semiconductor analysis, and advanced electronic materials development.

Advanced Features of HD-KFM III

dC/dZ Measurements: dC/dZ measures the change in capacitance with respect to the tip-sample distance, providing information about local dielectric properties.

Benefits: Enables mapping of dielectric constants and investigation of thin film properties at the nanoscale.

Topography: Metallic structure embedded on epoxy

dC/dZ: Metallic structure embedded on epoxy

EFC (Electrical Field Compensation for MFM):

EFC nullifies the electrostatic interaction between the tip and sample during Magnetic Force Microscopy measurements.

Benefits: Allows for pure magnetic measurements without electrostatic interference, crucial for accurate characterization of magnetic nanostructures.

HD-KFM: Nanotubes embedded on a polymer

2D Materials

Graphene

Surface Potential image of Graphene flakes

hBn - HD-KFM & PFM

hBn - HD-KFM

Semiconductors

SRAM

The surface potential scan of the SRAM shows: Precise workfunction mapping across transistor regions Clear voltage contrast between active and passive areas High-resolution potential distribution at metal-semiconductor interfaces Distinct potential variations revealing memory cell organization Sub-millivolt resolution shows detailed electronic structure

Electrode

HD-KFM III Technical Specifications

Operating Mode: Single-pass
Tip-Sample Distance: 0.1 - 0.5 nm (typical)
Excitation Modes: Dual-frequency (Bimodal)
Topography Measurement: First flexural mode frequency (mechanical excitation)
Surface Potential Measurement: Second flexural mode frequency (electrical excitation)
Signal Amplification: Q factor enhancement in the second eigenmode
VAC Bias: Optimized for second eigenmode, enabling lower voltage applications
Feedback System: Dual feedback control (topography and electrical signals)
AFM Compatibility: Nano-Observer II
Advanced Features: Dc/Dz Measurements, Electrical Field Compensation (EFC) for MFM, Lift Mode
Application Areas: Materials Science, Semiconductors, 2D Materials, Polymers, Life Sciences
Lateral Resolution: Superior to standard KFM (exact value not specified)
Sensitivity: Increased through minimized tip-sample distance and enhanced signal amplification
Electrostatic Field Strength: 100x to 10,000x stronger than standard KFM

Note: For specific numerical values on lateral resolution, sensitivity, or other detailed parameters, please contact CSInstruments for comprehensive technical data.

Materials Science (Surface potential mapping, work function measurements, defect detection, thin film analysis)
Semiconductors (Doping profiling, device characterization, failure analysis, nanoscale electronics)
2D Materials (Layer identification, electronic property mapping, substrate interaction studies, defect analysis)
Polymers (Charge distribution mapping, blend differentiation, aging studies, nanoscale polymer electronics)
Life Sciences (Biomaterial characterization, cell membrane charge mapping, protein/DNA charge analysis, bioelectronics)

Energy

Battery Sample

Scan size: 50 microns Modes: Soft ResiScope

P3HT (Organic PV cell)

Scan Mode: ResiScope III Scan size: 10x10 microns

Perovskite Sample

Current measurement Scan Mode: ResiScope III Scan size: 2x2 microns

Battery Sample

Scan size: 50 microns Modes: Soft ResiScope

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Polymers

Block Copolymer

Oscillating Mode Scan size: 1x1um

PCL Polycaprolactone

Resonant Mode Topography Scan size: 20x20 microns

Structured Polymer

Resonant Mode Topography Scan size: 5x5 microns

Block Copolymer

Oscillating Mode Scan size: 1x1um

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Biological Samples

Cell

Oscillating mode 80x80 micron

Proteins

Oscillating mode 2x2micron

Collagens

Oscillating mode Scan size 5x5 micron

Cell

Oscillating mode 80x80 micron

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2D Materials

Graphene Monolayers

Graphene flakes on SiO2 substrate. HD-KFM shows graphene flakes of different thickness (1 ML, 2ML and 3 ML).

MoS2 flakes

HD-KFM Mode Scan size: 30x30µm

HBN

2 microns size HD-KFM III measurement of a folded hBN device. Twhile surface potencial shows regions with characteristic moiré patterns. The visible contrast in the SP domains indicates opposite polarization vectors.

Graphene Monolayers

Graphene flakes on SiO2 substrate. HD-KFM shows graphene flakes of different thickness (1 ML, 2ML and 3 ML).

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Semiconductors

SIC Dopping Profiling

ResiScope measurement on a cross-section of a silicon substrate of 500 nm with regions with increasing level of carrier concentration (staircase type). Topography (top) image of the sample; polishing vertical lines are visible. (middle and bottom) Resistance map and its cross-section profile respectively. The doped regions range from 100 ohms to 1 Mohm (from right to left). This shows the capability of ResiScope to track differences in realtime with several orders of magnitude in difference (fr

Vanadium Dioxide

ResiScope image on a Metal to Insulate VO2 sample (10 microns). By controlling the thickness of the film it is possible to generate a morphology with VO2 blocks with different resistance separated by insulating VO2 walls. Thanks to the realtime adjustment of the gains it is possible to measure the resistance differences with high sensitivity.

Doped dots

ResiScope image of a semiconductor sample (50 micron size) with increasing doped dots. Resistance image shows clearly the position of the dopped dots with decreasing resistance from left to right due to increasing doping levels.

SIC Dopping Profiling

ResiScope measurement on a cross-section of a silicon substrate of 500 nm with regions with increasing level of carrier concentration (staircase type). Topography (top) image of the sample; polishing vertical lines are visible. (middle and bottom) Resistance map and its cross-section profile respectively. The doped regions range from 100 ohms to 1 Mohm (from right to left). This shows the capability of ResiScope to track differences in realtime with several orders of magnitude in difference (fr

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Materials Science

C36 Molecule

Example of high resolution image in X-y-z. Atomic steps on HOPG are visible. Also periodic arrange of self-assembled monolayers of C36 at different orientations. Periodic pitch visible in the image corresponds with the C36 chain length around 4.5 nm

Cobalt alloy coating

MFM signals Scan size 30x30µm

Nanotubes

Topography image of 500 nm obtained in Resonant Mode of a network of carbon nanotubes (5 nm width).

C36 Molecule

Example of high resolution image in X-y-z. Atomic steps on HOPG are visible. Also periodic arrange of self-assembled monolayers of C36 at different orientations. Periodic pitch visible in the image corresponds with the C36 chain length around 4.5 nm

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