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analyze of static random-access memory (sRAM) using Scanning Microwave Impedance Microscopy

Scanning Microwave Impedance Microscopy (sMIM)
Achieve Unmatched Electrical Property Mapping at the Nanoscale

Scanning Microwave Impedance Microscopy (sMIM) is a revolutionary AFM mode developed by PrimeNano and integrated with CSInstruments' Nano-Observer II. This cutting-edge technique offers high-quality images of local electrical properties with better than 50 nm resolution, utilizing microwave reflections from a nanoscale region directly under the sMIM probe.

Key Features

  • Versatile Material Sensitivity: Accurately measure metals, semiconductors, insulators, and dielectrics

  • Direct Measurement: Conductivity (σ) and permittivity (ε) measured directly at the nanoscale

  • Linear Relationship: Ensures accurate data with a linear relationship to electrical properties

  • Quantitative Mapping: Capable of quantitative doping concentration mapping

  • Nano-Scale C-V Spectra: Offers detailed capacitance-voltage spectra at the nanoscale

  • Sub-Surface Sensing: Image structures beneath the sample surface

Advanced Capabilities of sMIM

  • Unprecedented Sensitivity: Highest sensitivity for imaging challenging materials

  • Multiple Data Channels: Single scan provides six channels of data:

    1. sMIM-C: Capacitance/Permittivity variation

    2. sMIM-R: Resistivity/Conductivity variation

    3. dC/dV Amplitude: Carrier concentration

    4. dC/dV Phase: Carrier type (+/-)

    5. dR/dV Amplitude: Carrier concentration

    6. dR/dV Phase: Carrier type (+/-)

  • Minimal Sample Preparation: Reduces prep time, no need for conductive paths or current flow

  • Versatile Imaging Modes: Use in both contact and non-contact modes

  • User-Friendly Software: Easy scan management and configuration

analyze of static random-access memory (sRAM) using Scanning Microwave Impedance Microscopy

In this scan result, we analyze a sample of static random-access memory (sRAM) using Scanning Microwave Impedance Microscopy (sMIM) mode over a 13 micrometer area. The scan simultaneously captures topography and differential capacitance (dC/dV) signals.

scanning microwave impedance

The sMIM probes are MEMS devices with a shielded front and back, and a center transmission line to reduce environmental interference. With a 50nm radius, they optimize signal strength and resolution. The probe interface, a "leaky capacitor," creates an impedance mismatch, producing reflections. As the probe moves, changes in impedance generate real and imaginary signals, which are digitized to create sMIM-C and sMIM-R images, synchronized with topography. Contact us for sMIM probes now.

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