AFM for Silicon & Semiconductor Devices

From dopant profiles to FinFET and power-device cross-sections, ResiScope™ III resolves resistance over ten decades in one scan, the measurement usually done by SSRM or C-AFM, and HD-KFM™ III adds the surface potential across p-n junctions.

What to measure

Measurements and the Nano-Observer mode for each

Dopant profiles & junction delineation (SSRM)ResiScope™ III Leakage & local current (C-AFM)ResiScope™ III · Conductive AFM Surface potential across p-n junctions (KPFM)HD-KFM™ III Capacitance & dielectric contrast (sMIM)sMIM

Materials

Materials in this family

Material	What to measure	Nano-Observer modes
Siliconsilicon · Si wafer	Surface potential, work function (KPFM) · Current & resistance (C-AFM, SSRM)	HD-KFM™ III ResiScope™ III
FinFET / nanosheet / advanced CMOSFinFET · nanosheet · advanced CMOS	Surface potential, work function (KPFM) · Current & resistance (C-AFM, SSRM)	HD-KFM™ III ResiScope™ III
Dopant / junction profilingDopant · junction profiling	Current & resistance (C-AFM, SSRM) · Surface potential, work function (KPFM)	ResiScope™ III HD-KFM™ III
Power devices (IGBT, MOSFET)IGBT · MOSFET · Power devices	Surface potential, work function (KPFM) · Current & resistance (C-AFM, SSRM)	HD-KFM™ III ResiScope™ III
SiGe / GeGe · SiGe	Surface potential, work function (KPFM) · Current & resistance (C-AFM, SSRM)	HD-KFM™ III ResiScope™ III