AFM for Dielectrics & Resistive Switching

Resistive switching, memristors, gate oxides and charge-trapping layers are studied through local current. ResiScope™ III follows filaments and breakdown spots from low leakage to conductive paths, and HD-KFM™ III maps trapped charge.

What to measure

Measurements and the Nano-Observer mode for each

Filaments, leakage & breakdown spots (C-AFM)ResiScope™ III Trapped charge & surface potential (KPFM)HD-KFM™ III Electrostatic force contrast (EFM)EFM

Materials

Materials in this family

Material	What to measure	Nano-Observer modes
Resistive switching / memristorsRRAM · ReRAM · memristor	Current & resistance (C-AFM, SSRM) · Surface potential, work function (KPFM)	ResiScope™ III HD-KFM™ III
Charge trapping & electrets	Surface potential, work function (KPFM) · Current & resistance (C-AFM, SSRM)	HD-KFM™ III ResiScope™ III
Alkali halides & insulators (NaCl, KBr)KBr · NaCl · Alkali halides & insulators	Surface potential, work function (KPFM) · Current & resistance (C-AFM, SSRM)	HD-KFM™ III ResiScope™ III
HfO₂ (dielectric / RRAM)RRAM · HfO2 · dielectric	Current & resistance (C-AFM, SSRM) · Surface potential, work function (KPFM)	ResiScope™ III HD-KFM™ III
High-k dielectrics & gate oxides	Current & resistance (C-AFM, SSRM) · Surface potential, work function (KPFM)	ResiScope™ III HD-KFM™ III
Ta₂O₅ / TaOxTaOx · Ta2O5	Current & resistance (C-AFM, SSRM) · Surface potential, work function (KPFM)	ResiScope™ III HD-KFM™ III